Parametric results for: 2n7000 under Small Signal Field-Effect Transistors
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2N7000CSMG4
TT Electronics Resistors
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-CDSO-N3 | e4 | Not Qualified | 150 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | SMALL OUTLINE | GOLD | NO LEAD | DUAL | TT ELECTRONICS PLC | HERMETIC SEALED, CERAMIC, LCC1-3 | compliant | EAR99 | |||||||||||||||
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2N7000CSM-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-CDSO-N3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | SEMELAB LTD | SMALL OUTLINE, R-CDSO-N3 | compliant | EAR99 | SOT-23 | 3 | |||||||||||||
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2N7000RLRPG
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-92 | O-PBCY-T3 | e1 | COMMERCIAL | 260 | 40 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN SILVER COPPER | THROUGH-HOLE | BOTTOM | ROCHESTER ELECTRONICS LLC | LEAD FREE, CASE 29-11, TO-226, 3 PIN | unknown | TO-92 | 3 | CASE 29-11 | |||||||||||
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2N7000P003-G
Microchip Technology Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | GREEN PACKAGE-2 | compliant | EAR99 | |||||||||||||||||
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2N7000
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | TO-92 | 3 | 8541.21.00.95 | |||||||||
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2N7000RLRP
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | COMMERCIAL | NOT SPECIFIED | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | ROCHESTER ELECTRONICS LLC | CASE 29-11, TO-226, 3 PIN | unknown | TO-92 | 3 | CASE 29-11 | |||||||||
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2N7000ZL1
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | EUROPEAN PART NUMBER | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-92 | O-PBCY-W3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-W3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||||
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2N7000RLRM
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||
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2N7000RLRA
Motorola Mobility LLC
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||
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2N7000D74Z
Fairchild Semiconductor Corporation
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e1 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN SILVER COPPER | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 |