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Parametric » Transistors » Small Signal Field-Effect Transistors

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Manufacturer Part Number: 2n7000

1 - 20 of 263 results sorted by Risk Rank

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Part Number Composite Price
Risk Rank Pbfree Code Rohs Code Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max Additional Feature Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Transistor Application Transistor Element Material JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Package Body Material Package Shape Package Style Terminal Finish Terminal Form Terminal Position Ihs Manufacturer
Part Package Code
Package Description
Pin Count
Manufacturer Package Code
Reach Compliance Code
ECCN Code
HTS Code
Factory Lead Time
Samacsys Description
2N7000
ON Semiconductor
$0.1427
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 TO-226, 3 PIN 3 135AN compliant EAR99 8541.21.00.95 1 Week N-channel MOSFET,2N7000 0.2A 60V
2N7000-D26Z
ON Semiconductor
$0.1028
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92, 3 PIN 135AR compliant
2N7000-D75Z
ON Semiconductor
$0.1470
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 135AR compliant
2N7000-D74Z
ON Semiconductor
$0.1818
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 135AR compliant
2N7000-G
Microchip Technology Inc
$0.2968
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω HIGH INPUT IMPEDANCE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT APPLICABLE NOT APPLICABLE PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC CYLINDRICAL, O-PBCY-T3 compliant EAR99 10 Weeks
2N7000_D26Z
ON Semiconductor
$0.1837
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.21.00.95 16 Weeks
2N7000
Diotec Semiconductor AG
$0.0464
Yes Active N-CHANNEL NO SINGLE 3 60 V 1 200 mA 5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-92 O-PBCY-W3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM DIOTEC SEMICONDUCTOR AG TO-92 CYLINDRICAL, O-PBCY-W3 3 compliant EAR99 8541.21.00.95
2N7000_D74Z
ON Semiconductor
Check for Price
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.21.00.95 11 Weeks
2N7000TA
ON Semiconductor
$0.1157
Yes Active N-CHANNEL NO Single 200 mA METAL-OXIDE SEMICONDUCTOR 400 mW e3 150 °C Tin (Sn) ON SEMICONDUCTOR , compliant EAR99 12 Weeks MOSFET N Channel 60V 0.2A 3 Pin TO92
2N7000BU
ON Semiconductor
$0.1238
Yes Active N-CHANNEL NO Single 200 mA METAL-OXIDE SEMICONDUCTOR 400 mW e3 150 °C Tin (Sn) ON SEMICONDUCTOR , compliant EAR99 1 Week ON SEMICONDUCTOR - 2N7000BU - MOSFET Tra... more
2N7000
NTE Electronics Inc
$0.5695
Yes Active NOT SPECIFIED NOT SPECIFIED NTE ELECTRONICS INC , unknown
2N7000
Fairchild Semiconductor Corporation
Check for Price
Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE BOTTOM FAIRCHILD SEMICONDUCTOR CORP TO-92 CYLINDRICAL, O-PBCY-T3 3 3LD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE) compliant EAR99 8541.21.00.95 N-channel MOSFET,2N7000 0.2A 60V
2N7000RLRAG
ON Semiconductor
Check for Price
Yes End Of Life N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C 260 40 PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 CYLINDRICAL, O-PBCY-T3 3 29-11 compliant EAR99 8541.21.00.95 N-channel MOSFET,2N7000 0.2A 60V
2N7000G4
TT Electronics Resistors
Check for Price
Yes Active N-CHANNEL NO SINGLE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-92 O-PBCY-T3 e4 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL GOLD THROUGH-HOLE BOTTOM TT ELECTRONICS PLC CYLINDRICAL, O-PBCY-T3 compliant EAR99 8541.21.00.95
2N7000
Motorola Mobility LLC
Check for Price
Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Lead (Sn/Pb) THROUGH-HOLE BOTTOM MOTOROLA INC TO-92 CYLINDRICAL, O-PBCY-T3 3 unknown 8541.21.00.95
2N7000RLRPG
ON Semiconductor
Check for Price
Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C 260 40 PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 LEAD FREE, CASE 29-11, TO-226, 3 PIN 3 29-11 unknown EAR99 8541.21.00.95
2N7000
WEITRON INTERNATIONAL CO., LTD.
Check for Price
Contact Manufacturer WEITRON TECHNOLOGY CO LTD , unknown
2N7000BUD26Z
Fairchild Semiconductor Corporation
Check for Price
Obsolete N-CHANNEL NO SINGLE 3 60 V 1 200 mA 5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM FAIRCHILD SEMICONDUCTOR CORP CYLINDRICAL, O-PBCY-T3 unknown EAR99
2N7000BUD75Z
Fairchild Semiconductor Corporation
Check for Price
Obsolete N-CHANNEL NO SINGLE 3 60 V 1 200 mA 5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM FAIRCHILD SEMICONDUCTOR CORP CYLINDRICAL, O-PBCY-T3 unknown EAR99
2N7000_D74Z
Fairchild Semiconductor Corporation
Check for Price
Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE BOTTOM FAIRCHILD SEMICONDUCTOR CORP TO-92 CYLINDRICAL, O-PBCY-T3 3 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION) compliant EAR99 8541.21.00.95

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