Parametric results for: 2n7000 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 9 HIGH INPUT IMPEDANCE 8 LOGIC LEVEL COMPATIBLE 7 LOW THRESHOLD 6

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Configuration (4)

SINGLE 74 Single 3 SINGLE WITH BUILT-IN DIODE 148 SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

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DS Breakdown Voltage-Min (1)

60 V 212

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Drain Current-Max (Abs) (ID) (1)

200 mA 3

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Drain Current-Max (ID) (7)

75 mA 1 115 mA 7 200 mA 202 210 mA 1 300 mA 7 350 mA 1 500 mA 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (7)

1.8 Ω 2 2 Ω 1 5 Ω 195 5.3 Ω 1 5.4 Ω 2 6 Ω 4 7.5 Ω 6

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 227

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5 pF 159 10 pF 4

Min (pF) - Max (pF)

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TO-226AA 8 TO-92 161

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O-PBCY-T3 164 O-PBCY-W3 25 R-CDSO-N3 6 R-PSIP-W3 7 R-PSSO-G3 8 X-XUUC-N 1

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e0 50 e1 12 e3 25 e4 4

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Manufacturer (47)

Bytesonic Corporation 1 Calogic Inc 12 Comchip Technology Corporation Ltd 1 Continental Device India Ltd 2 Diodes Incorporated 12 Diotec Semiconductor AG 1 Exar Corporation 1 Fairchild Semiconductor Corporation 41 Freescale Semiconductor 3 HSMC Corporation 1 InterFET Corporation 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 KEC 3 Kodenshi Corporation 1 Kodenshi Sensing 1 Lite-On Semiconductor Corporation 1 Micro Commercial Components 5 Microchip Technology Inc 9 Motorola Mobility LLC 12 Motorola Semiconductor Products 12 National Semiconductor Corporation 2 North American Philips Discrete Products Div 1 NTE Electronics Inc 1 NXP Semiconductors 4 onsemi 22 Philips Semiconductors 2 Rochester Electronics LLC 9 Samsung Semiconductor 1 Secos Corporation 1 Shantou Huashan Electronic Devices Co Ltd 1 Sipex Corporation 1 STMicroelectronics 1 Supertex Inc 21 Taitron Components Inc 3 TDK Micronas GmbH 1 Telcom Semiconductor Inc 1 Teledyne Technologies Inc 1 Temic Semiconductors 4 Texas Instruments 13 Topaz Semiconductor 1 TT Electronics Power and Hybrid / Semelab Limited 5 TT Electronics Resistors 3 Unisonic Technologies Co Ltd 10 Vishay Intertechnologies 2 Vishay Siliconix 2 WEITRON INTERNATIONAL CO., LTD. 2 Zetex / Diodes Inc 9

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1 4 NOT APPLICABLE 2 NOT SPECIFIED 3

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Number of Elements (1)

1 224

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Number of Terminals (1)

3 210

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ENHANCEMENT MODE 225

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150.0 °C 160 200.0 °C 7

Min (°C) - Max (°C)

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-55.0 °C 38

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CERAMIC, METAL-SEALED COFIRED 6 PLASTIC/EPOXY 204 UNSPECIFIED 1

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RECTANGULAR 21 ROUND 189 UNSPECIFIED 1

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CYLINDRICAL 190 IN-LINE 7 SMALL OUTLINE 14 UNCASED CHIP 1

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Active 54 Contact Manufacturer 8 Obsolete 143 Transferred 40

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No 7 Yes 26

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235 5 240 5 260 8 NOT APPLICABLE 2 NOT SPECIFIED 20

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Polarity/Channel Type (2)

N-CHANNEL 225 N-CHANNEL AND P-CHANNEL 1

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350 mW 24 400 mW 3 625 mW 2

Min (W) - Max (W)

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350 mW 8 400 mW 61 625 mW 2 830 mW 1 1 W 6

Min (W) - Max (W)

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Surface Mount (2)

NO 207 YES 19

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