Parametric results for: 2n7000 under Small Signal Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Pulsed Drain Current-Max (IDM) Surface Mount

HIGH RELIABILITY 16 LOGIC LEVEL COMPATIBLE 16 LOGIC LEVEL COMPATIBLE, RADIATION HARDENED 7 RADIATION HARDENED 6

429 hits Apply

0.35 mJ 1 75.0 mJ 1 500.0 mJ 1

Min (mJ) - Max (mJ)

429 hits Apply

DRAIN 144 GATE 81 ISOLATED 17 SUBSTRATE 3

429 hits Apply

Configuration (5)

SEPARATE, 2 ELEMENTS 1 SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 4 SINGLE 304 SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR 1 SINGLE WITH BUILT-IN DIODE 118

429 hits Apply

DS Breakdown Voltage-Min (9)

30 V 81 35 V 12 40 V 89 60 V 46 90 V 8 100 V 73 200 V 57 400 V 19 500 V 31

Min (V) - Max (V)

429 hits Apply

Drain Current-Max (ID) (24)

15 mA 2 50 mA 3 530 mA 16 800 mA 16 860 mA 8 980 mA 7 990 mA 14 1.16 A 5 1.25 A 4 1.4 A 5 1.5 A 7 1.69 A 11 1.8 A 6 2 A 4 2.25 A 2 2.5 A 21 2.9 A 3 3 A 6 3.5 A 6 4 A 24 5.5 A 22 6 A 4 6.5 A 23 8 A 20

Min (A) - Max (A)

429 hits Apply

Drain-source On Resistance-Max (27)

195 mΩ 3 220 mΩ 4 300 mΩ 2 320 mΩ 1 350 mΩ 2 420 mΩ 4 680 mΩ 16 800 mΩ 1 1.1 Ω 4 1.39 Ω 3 1.4 Ω 27 1.6 Ω 4 1.68 Ω 1 1.77 Ω 11 3 Ω 15 3.65 Ω 12 4 Ω 8 25 Ω 35 30 Ω 11 40 Ω 35 50 Ω 10 60 Ω 35 70 Ω 3 75 Ω 10 80 Ω 11 100 Ω 10 175 Ω 10

Min (Ω) - Max (Ω)

429 hits Apply

JUNCTION 176 METAL-OXIDE SEMICONDUCTOR 252

429 hits Apply

0.5 pF 3 0.8 pF 5 3 pF 1 5 pF 21 7 pF 18 8 pF 84 10 pF 24 20 pF 7 30 pF 5 40 pF 1 50 pF 1

Min (pF) - Max (pF)

429 hits Apply

MO-036AB 4 TO-18 9 TO-205AD 14 TO-205AF 82 TO-206AA 97 TO-206AF 2 TO-72 10

429 hits Apply

O-MBCY-W3 236 O-MBCY-W4 5 O-MBCY-W6 1 R-CBCC-N15 12 R-CDIP-T14 4 R-CDSO-N3 15 R-CQCC-N15 25 R-PDSO-G5 1 R-XDSO-N3 67 R-XUUC-N3 55

429 hits Apply

e0 216

429 hits Apply

Manufacturer (16)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 45 Infineon Technologies AG 50 International Rectifier 90 Intersil Corporation 30 Microchip Technology Inc 1 Microsemi Corporation 147 Motorola Mobility LLC 15 Motorola Semiconductor Products 15 Omnirel Corp 1 Semicoa Semiconductors 1 Solid State Devices Inc (SSDI) 3 Solitron Devices Inc 9 Toshiba America Electronic Components 1 Vishay Siliconix 3 VPT Components 16

429 hits Apply

1 7

429 hits Apply

Number of Elements (3)

1 423 2 1 4 4

Min - Max

429 hits Apply

Number of Terminals (6)

14 4 15 37 3 380 4 5 5 1 6 1

429 hits Apply

DEPLETION MODE 191 ENHANCEMENT MODE 237

429 hits Apply

125.0 °C 4 150.0 °C 109 175.0 °C 36 200.0 °C 56

Min (°C) - Max (°C)

429 hits Apply

-65.0 °C 17 -55.0 °C 4

Min (°C) - Max (°C)

429 hits Apply

CERAMIC, METAL-SEALED COFIRED 56 METAL 242 PLASTIC/EPOXY 1 UNSPECIFIED 122

429 hits Apply

RECTANGULAR 179 ROUND 242

429 hits Apply

CHIP CARRIER 37 CYLINDRICAL 249 IN-LINE 4 SMALL OUTLINE 83 UNCASED CHIP 55

429 hits Apply

Active 76 Contact Manufacturer 1 End Of Life 1 Obsolete 250 Transferred 101

429 hits Apply

No 121

429 hits Apply

260 1 NOT SPECIFIED 33

429 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 318 P-CHANNEL 110

429 hits Apply

300 mW 3 570 mW 8 725 mW 8 8.33 W 7 20 W 1 25 W 1

Min (W) - Max (W)

429 hits Apply

300 mW 4 360 mW 21 710 mW 2 800 mW 1 1 W 1 1.2 W 3 1.25 W 9 1.4 W 4 1.8 W 9 2.5 W 8 6.25 W 8 8.33 W 8 15 W 4 20 W 8 25 W 42 75 W 2

Min (W) - Max (W)

429 hits Apply

6.5 A 1 11 A 3 14 A 3 16 A 1 20 A 1

Min (A) - Max (A)

429 hits Apply

Surface Mount (2)

NO 253 YES 175

429 hits Apply