Parametric » Transistors » Small Signal Field-Effect Transistors

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Manufacturer Part Number: 2n7000 Pbfree Code: No

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Risk Rank Pbfree Code Rohs Code Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation-Max (Abs) Transistor Application Transistor Element Material JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Moisture Sensitivity Level Operating Temperature-Max Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Package Body Material Package Shape Package Style Terminal Finish Terminal Form Terminal Position Ihs Manufacturer
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2N7000
TT Electronics Power and Hybrid / Semelab Limited
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No No Obsolete N-CHANNEL NO SINGLE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-92 O-PBCY-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM SEMELAB LTD CYLINDRICAL, O-PBCY-T3 compliant EAR99
2N7000RLRM
Rochester Electronics LLC
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No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL NOT SPECIFIED 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC CASE 29-11, TO-226, 3 PIN unknown TO-92 3 CASE 29-11
2N7000RLRA
Rochester Electronics LLC
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No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC CASE 29-11, TO-226, 3 PIN unknown TO-92 3 CASE 29-11
2N7000
Rochester Electronics LLC
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No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL NOT SPECIFIED 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC LEAD FREE, TO-92, 3 PIN unknown TO-92 3
2N7000CSM-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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No No Active N-CHANNEL YES SINGLE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-CDSO-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED RECTANGULAR SMALL OUTLINE NO LEAD DUAL SEMELAB LTD SMALL OUTLINE, R-CDSO-N3 compliant EAR99 SOT-23 3
2N7000CSM-QR-B
TT Electronics Power and Hybrid / Semelab Limited
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No No Active N-CHANNEL YES SINGLE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-CDSO-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED RECTANGULAR SMALL OUTLINE NO LEAD DUAL SEMELAB LTD SMALL OUTLINE, R-CDSO-N3 compliant EAR99 SOT-23 3
2N7000CSM
TT Electronics Power and Hybrid / Semelab Limited
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No No Obsolete N-CHANNEL YES SINGLE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-CDSO-N3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED RECTANGULAR SMALL OUTLINE NO LEAD DUAL SEMELAB LTD SMALL OUTLINE, R-CDSO-N3 compliant EAR99 3
2N7000RLRP
Rochester Electronics LLC
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No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-92 O-PBCY-T3 e0 COMMERCIAL NOT SPECIFIED 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL TIN LEAD THROUGH-HOLE BOTTOM ROCHESTER ELECTRONICS LLC CASE 29-11, TO-226, 3 PIN unknown TO-92 3 CASE 29-11
2N7000
Calogic Inc
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No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-W3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM CALOGIC LLC CYLINDRICAL, O-PBCY-W3 compliant EAR99 TO-92 3 8541.21.00.95
2N7000RLRA
ON Semiconductor
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No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e0 Not Qualified 150 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Tin/Lead (Sn80Pb20) THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CASE 29-11, TO-226, 3 PIN not_compliant EAR99 TO-92 3 29-11 2N7000RLRA 1 Week

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