Parametric » Transistors » Small Signal Field-Effect Transistors

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1 - 20 of 55,005 results sorted by Risk Rank

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Part Number Composite Price
Risk Rank Pbfree Code Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max Additional Feature Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Transistor Application Transistor Element Material JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Reference Standard Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Package Body Material Package Shape Package Style Terminal Finish Terminal Form Terminal Position Source Content uid
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Part Package Code
Package Description
Pin Count
Manufacturer Package Code
Reach Compliance Code
ECCN Code
Factory Lead Time
Samacsys Description
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Date Of Intro
2V7002LT1G
ON Semiconductor
$0.0990
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2V7002LT1G ON SEMICONDUCTOR SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 6 Weeks 2V7002LT1G, NFET SOT23 60V 115MA 7.5O ON... more ON Semiconductor
2N7002,215
Nexperia
$0.1065
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002,215 NEXPERIA TO-236 3 SOT23 compliant EAR99 4 Weeks MOSFET N-Channel 60V 0.3A TO236AB NXP 2N... more Nexperia 8541.21.00.95 1995-04-01
2N7002
ON Semiconductor
$0.1207
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002 ON SEMICONDUCTOR SOT-23, 3 PIN 318-08 compliant EAR99 1 Week N-channel MOSFET,2N7002 0.115A 60V ON Semiconductor
2N7002LT1G
ON Semiconductor
$0.0947
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002LT1G ON SEMICONDUCTOR SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 1 Week 2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23 ON Semiconductor 8541.21.00.95
BSS84,215
Nexperia
$0.1230
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 1 LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -65 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS84,215 NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 4 Weeks MOSFET P-Channel 50V 0.13A TO236AB NXP B... more Nexperia 8541.21.00.95
2N7002K
ON Semiconductor
$0.1162
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 115 mA 2 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002K ON SEMICONDUCTOR ROHS COMPLIANT, ULTRA SMALL PACKAGE-3 318-08 compliant EAR99 8 Weeks MOSFET, Fairchild, 2N7002K Fairchild 2N7... more ON Semiconductor
BST82,215
Nexperia
$0.2161
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 80 V 1 175 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 1 150 °C -65 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BST82,215 NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 4 Weeks BST82,215 N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Nexperia Nexperia 2017-02-01
BS170
ON Semiconductor
$0.1606
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM BS170 ON SEMICONDUCTOR TO-92 TO-92, 3 PIN 3 135AN compliant EAR99 1 Week N-channel JFET,BF245A 2mA 30V,BP ON Semiconductor
2N7002ET1G
ON Semiconductor
$0.0768
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 260 mA 260 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002ET1G ON SEMICONDUCTOR SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 11 Weeks, 4 Days MOSFET N-Channel 60V 0.26A SOT23 ON Semi... more ON Semiconductor
BSS138LT3G
ON Semiconductor
$0.0946
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS138LT3G ON SEMICONDUCTOR SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 7 Weeks MOSFET N-Channel 50V 0.2A SOT23 ON Semic... more ON Semiconductor
BSS123LT1G
ON Semiconductor
$0.1061
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 170 mA 6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS123LT1G ON SEMICONDUCTOR SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 1 Week MOSFET N-Channel 100V 0.17A SOT23 ON Sem... more ON Semiconductor 8541.29.00.95
2N7000
ON Semiconductor
$0.1629
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM 2N7000 ON SEMICONDUCTOR TO-92 TO-226, 3 PIN 3 135AN compliant EAR99 1 Week N-channel MOSFET,2N7000 0.2A 60V ON Semiconductor
2N7002LT3G
ON Semiconductor
$0.0667
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002LT3G ON SEMICONDUCTOR SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 8 Weeks NULL ON Semiconductor
BSS138LT1G
ON Semiconductor
$0.0919
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS138LT1G ON SEMICONDUCTOR SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 1 Week MOSFET N-Channel 50V 0.2A SOT23 ON Semic... more ON Semiconductor
2N7002BK,215
Nexperia
$0.0805
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 350 mA 1.6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL 2N7002BK,215 NEXPERIA TO-236 ROHS COMPLIANT, PLASTIC PACKAGE-3 3 SOT23 compliant EAR99 4 Weeks Trench MOSFET,N channel 60 V,350mA SOT23 Nexperia
2N7000-D26Z
ON Semiconductor
$0.1278
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM 2N7000-D26Z ON SEMICONDUCTOR TO-92, 3 PIN 135AR compliant EAR99
BSS123
ON Semiconductor
$0.0848
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 12 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS123 ON SEMICONDUCTOR SOT-23, 3 PIN 318-08 compliant EAR99 1 Week BSS123 N-Channel MOSFET, 170 mA, 100 V P... more ON Semiconductor 8541.21.00.95 1996-09-01
BSS84
ON Semiconductor
$0.0860
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS84 ON SEMICONDUCTOR SOT-23, 3 PIN 318-08 compliant EAR99 1 Week P-Channel Enhancement Mode Field Effect Transistor ON Semiconductor
BSS84LT1G
ON Semiconductor
$0.0901
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL BSS84LT1G ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 10 Weeks MOSFET 50V 130mA P-Channel ON Semiconductor
J112
ON Semiconductor
$0.1899
Yes Active N-CHANNEL NO SINGLE 3 1 50 Ω 5 pF JUNCTION DEPLETION MODE 400 mW CHOPPER SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM J112 ON SEMICONDUCTOR TO-92 TO-226, 3 PIN 3 135AN compliant EAR99 1 Week

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