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Parametric » Transistors » Small Signal Field-Effect Transistors

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1 - 20 of 54,879 results sorted by Risk Rank

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Part Number Composite Price
Risk Rank Pbfree Code Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration Number of Terminals DS Breakdown Voltage-Min Number of Elements Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max Additional Feature Feedback Cap-Max (Crss) FET Technology Operating Mode Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Transistor Application Transistor Element Material JEDEC-95 Code JESD-30 Code JESD-609 Code Qualification Status Reference Standard Moisture Sensitivity Level Operating Temperature-Max Operating Temperature-Min Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Package Body Material Package Shape Package Style Terminal Finish Terminal Form Terminal Position Ihs Manufacturer
Part Package Code
Package Description
Pin Count
Manufacturer Package Code
Reach Compliance Code
ECCN Code
HTS Code
Factory Lead Time
Samacsys Description
BSS84,215
Nexperia
$0.1215
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 1 LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -65 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 8541.21.00.95 4 Weeks MOSFET P-Channel 50V 0.13A TO236AB NXP B... more
BSS123
ON Semiconductor
$0.0835
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 12 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 8541.21.00.95 1 Week BSS123 N-Channel MOSFET, 170 mA, 100 V P... more
BSS84LT1G
ON Semiconductor
$0.0539
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 8541.21.00.95 10 Weeks MOSFET 50V 130mA P-Channel
J111
ON Semiconductor
$0.1164
Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 350 mW CHOPPER SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 TO-226AA, 3 PIN 3 135AN compliant 8541.21.00.95 1 Week
2N7002ET1G
ON Semiconductor
$0.0408
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 260 mA 260 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 11 Weeks, 4 Days MOSFET N-Channel 60V 0.26A SOT23 ON Semi... more
2N7002LT1G
ON Semiconductor
$0.0518
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 8541.21.00.95 1 Week 2N7002LT1G, N-channel MOSFET Transistor 0.115 A 60 V, 3-Pin SOT-23
2N7002LT3G
ON Semiconductor
$0.0284
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 8 Weeks NULL
2N7002K
ON Semiconductor
$0.1170
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 115 mA 2 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 W SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 8541.21.00.95 8 Weeks MOSFET, Fairchild, 2N7002K Fairchild 2N7... more
BS170
ON Semiconductor
$0.1593
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 CYLINDRICAL, O-PBCY-T3 3 135AN compliant EAR99 8541.21.00.95 1 Week N-channel JFET,BF245A 2mA 30V,BP
BST82,215
Nexperia
$0.1176
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 80 V 1 175 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 1 150 °C -65 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 8541.21.00.95 4 Weeks BST82,215 N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 Nexperia
2N7002
ON Semiconductor
$0.0896
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 8541.21.00.95 1 Week N-channel MOSFET,2N7002 0.115A 60V
2N7002,215
Nexperia
$0.0456
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 8541.21.00.95 4 Weeks MOSFET N-Channel 60V 0.3A TO236AB NXP 2N... more
BSS138LT3G
ON Semiconductor
$0.0489
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant EAR99 8541.21.00.95 7 Weeks MOSFET N-Channel 50V 0.2A SOT23 ON Semic... more
2V7002LT1G
ON Semiconductor
$0.1049
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 6 Weeks 2V7002LT1G, NFET SOT23 60V 115MA 7.5O ON... more
BSS84
ON Semiconductor
$0.0664
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SMALL OUTLINE, R-PDSO-G3 318-08 compliant EAR99 8541.21.00.95 1 Week P-Channel Enhancement Mode Field Effect Transistor
BSS123LT1G
ON Semiconductor
$0.0545
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 170 mA 6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ON SEMICONDUCTOR SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant EAR99 8541.29.00.95 1 Week MOSFET N-Channel 100V 0.17A SOT23 ON Sem... more
2N7002P,235
Nexperia
$0.1022
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 360 mA 1.6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101; IEC-60134 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 8541.21.00.75 4 Weeks MOSFET N-CH 60V 0.36A SOT-23
2N7002BK,215
Nexperia
$0.0761
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 350 mA 1.6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NEXPERIA TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant EAR99 8541.21.00.75 4 Weeks Trench MOSFET,N channel 60 V,350mA SOT23
J111-D26Z
ON Semiconductor
$0.1683
Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL THROUGH-HOLE BOTTOM ON SEMICONDUCTOR CYLINDRICAL, O-PBCY-T3 135AR compliant
2N7000
ON Semiconductor
$0.1374
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ON SEMICONDUCTOR TO-92 TO-226, 3 PIN 3 135AN compliant EAR99 8541.21.00.95 1 Week N-channel MOSFET,2N7000 0.2A 60V

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