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DMN26D0UFB4-7B
Diodes Incorporated
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 240 mA | 3 Ω | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PBCC-N3 | e4 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | DIODES INC | DFN | CHIP CARRIER, R-PBCC-N3 | 3 | CASE DFN1006H4-3 | compliant | EAR99 |