Parametric results for: NDS351AN under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

1.4 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

160 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G3 2

4 hits Apply

e3 2

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 onsemi 1

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

End Of Life 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 2

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

500 mW 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply