Compare | Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Part Number |
Composite Price
|
Rohs Code
|
Part Life Cycle Code
|
Polarity/Channel Type |
Surface Mount
|
Configuration |
Number of Terminals
|
DS Breakdown Voltage-Min
|
Number of Elements |
Drain Current-Max (ID)
|
Drain-source On Resistance-Max
|
FET Technology |
Operating Mode
|
Transistor Application
|
Transistor Element Material
|
JESD-30 Code
|
Peak Reflow Temperature (Cel)
|
Time@Peak Reflow Temperature-Max (s)
|
Package Body Material
|
Package Shape
|
Package Style
|
Terminal Form
|
Terminal Position
|
Ihs Manufacturer
|
Package Description
|
Reach Compliance Code
|
ECCN Code
|
Source Content uid
|
|
SSM6N15AFU,LF(T
Toshiba America Electronic Components
|
$0.1095 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 6 | 30 V | 2 | 100 mA | 6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | SMALL OUTLINE, R-PDSO-G6 | unknown | EAR99 | |||
|
SSM6N15AFU,LF(D
Toshiba America Electronic Components
|
Check for Price | Obsolete | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 6 | 30 V | 2 | 100 mA | 6 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | SMALL OUTLINE, R-PDSO-G6 | unknown | EAR99 | SSM6N15AFU,LF(D |