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HFA1110IB
Harris Semiconductor
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Check for Price | No | Transferred | 35 mV | 750 MHz | 1300 V/us | 65 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 40 µA | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | GULL WING | 1.27 mm | DUAL | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8542.33.00.01 | |||||||||||||
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HFA1110IP
Harris Semiconductor
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Check for Price | No | Obsolete | 35 mV | 750 MHz | 1300 V/us | 65 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 40 µA | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8542.33.00.01 | DIP-8 | ||||||||||||
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LH4003CD
Texas Instruments
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Check for Price | No | Obsolete | 15 mV | 250 MHz | 1200 V/us | 200 µA | 65 mA | 1 | BUFFER | 6 V | -6 V | HYBRID | 200 µA | -8 V | 1000 V/us | 8 V | OTHER | R-CDIP-T24 | Not Qualified | e0 | 85 °C | -25 °C | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.232 mm | 15.24 mm | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | 8542.33.00.01 | DIP, DIP24,.6 | ||||||||||
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LH4003D
Texas Instruments
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Check for Price | No | Obsolete | 20 mV | 250 MHz | 1200 V/us | 200 µA | 65 mA | 1 | BUFFER | 6 V | -6 V | HYBRID | 200 µA | -8 V | 1000 V/us | 8 V | MILITARY | R-CDIP-T24 | Not Qualified | e0 | 125 °C | -55 °C | 24 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.232 mm | 15.24 mm | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | 8542.33.00.01 | DIP, DIP24,.6 | ||||||||||
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HFA1112IPZ
Intersil Corporation
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Check for Price | Yes | Obsolete | 35 mV | 850 MHz | 1500 V/us | 65 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.33 mm | 7.62 mm | 9.585 mm | INTERSIL CORP | compliant | EAR99 | 8542.33.00.01 | PLASTIC, MS-001-BA, DIP-8 | PDIP, SOIC | 8, 8 | ||||||||||
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LH4002CN
Rochester Electronics LLC
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Check for Price | No | Active | 50 mV | 150 MHz | 1250 V/us | 200 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 6 V | OTHER | R-PDIP-T10 | COMMERCIAL | e0 | NOT SPECIFIED | 85 °C | -25 °C | NOT SPECIFIED | NOT SPECIFIED | 10 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 7.62 mm | 14.135 mm | ROCHESTER ELECTRONICS LLC | unknown | PLASTIC, DIP-10 | DIP | 10 | ||||||||||
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HFA1114IB
Renesas Electronics Corporation
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Check for Price | Obsolete | 850 MHz | 1900 V/us | 65 µA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDSO-G8 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | DUAL | RENESAS ELECTRONICS CORP | compliant | EAR99 | 8542.33.00.01 | ||||||||||||||||||||||
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HFA1110IBZ
Intersil Corporation
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Check for Price | Yes | Obsolete | 35 mV | 750 MHz | 1300 V/us | 65 µA | 33 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 40 µA | -6 V | 50 mA | 6 V | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 3.9 mm | 4.9 mm | INTERSIL CORP | compliant | EAR99 | 8542.33.00.01 | SOP, SOP8,.25 | SOIC | 8 | ||||
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LH4002CH
Texas Instruments
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Check for Price | No | Obsolete | 50 mV | 200 MHz | 1250 V/us | 200 µA | 35 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 200 µA | -6 V | 1000 V/us | 6 V | OTHER | O-MBCY-W8 | Not Qualified | e0 | 85 °C | -25 °C | 8 | METAL | CAN8,.2 | ROUND | CYLINDRICAL | NO | TIN LEAD | WIRE | BOTTOM | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | 8542.33.00.01 | , CAN8,.2 | ||||||||||||||
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LH4002H
Texas Instruments
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Check for Price | No | Obsolete | 50 mV | 200 MHz | 1250 V/us | 200 µA | 35 mA | 1 | BUFFER | 5 V | -5 V | BIPOLAR | 200 µA | -6 V | 1000 V/us | 6 V | MILITARY | O-MBCY-W8 | Not Qualified | e0 | 125 °C | -55 °C | 8 | METAL | CAN8,.2 | ROUND | CYLINDRICAL | NO | TIN LEAD | WIRE | BOTTOM | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | 8542.33.00.01 | , CAN8,.2 |