Parametric results for: 1N4125-1 under Zener Diodes
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1N4125-1
Microchip Technology Inc
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$3.9108 | No | Active | 250 µA | 480 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 250 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | MIL-19500/435F | DO-204AH | 1 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | |||||||||||||
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JAN1N4125-1
Microchip Technology Inc
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$4.2671 | No | Active | 250 µA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/435F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | ||||||||||||||||
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JANTX1N4125-1
Microchip Technology Inc
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$6.2190 | No | Active | 250 µA | 480 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-LALF-W2 | e0 | MIL | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, DO-35, 2 PIN | compliant | ||||||||||||||
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JANTXV1N4125-1
Microchip Technology Inc
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$9.3199 | No | Active | 250 µA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/435F | DO-35 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | ||||||||||||||||
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JANS1N4125-1
Microchip Technology Inc
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$34.7978 | No | Active | 250 µA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/435F | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-7, 2 PIN | compliant | ||||||||||||||
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JANS1N4125-1/TR
Microchip Technology Inc
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$34.9550 | No | Active | 250 µA | 10 nA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | HIGH RELIABILITY | 250 Ω | 35.8 V | 44.65 mV/°C | 5 % | O-LALF-W2 | e0 | MIL-PRF-19500; MIL-STD-750 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||
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1N4125-1E3TR
Microsemi Corporation
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Check for Price | Yes | Obsolete | 250 µA | 480 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-LALF-W2 | e3 | DO-204AH | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | unknown | DO-35 | 2 | ||||||||||||
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JANTX1N4125-1
Compensated Devices Inc
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Check for Price | Transferred | 250 µA | 10 nA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | MIL-19500/435F | DO-35 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | DO-7, 2 PIN | unknown | ||||||||||||||||
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1N4125-1C
Cobham PLC
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Check for Price | Transferred | 250 mA | 500 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | LOW NOISE | 2 % | Not Qualified | O-LALF-W2 | e0 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | COBHAM PLC | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | EAR99 | 8541.10.00.50 | ||||||||||||||||
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1N4125-1E3
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 250 µA | 480 mW | 47 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 250 Ω | 5 % | O-LALF-W2 | e3 | DO-204AH | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | DO-35 | 2 | EAR99 | 8541.10.00.50 |