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1N5802
Solid State Devices Inc (SSDI)
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$1.0000 | Obsolete | 2.5 A | 875 mV | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | 1 | 175 °C | SOLID STATE DEVICES INC | AXLG-2 | compliant | EAR99 | |||||||||||||||||||||||||
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1N5802
Microchip Technology Inc
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$7.0868 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | HIGH RELIABILITY | GENERAL PURPOSE | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||||||
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1N5802/TR
Microchip Technology Inc
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$7.1845 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A PACKAGE-2 | compliant | ||||||||||||
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JAN1N5802
Microchip Technology Inc
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$7.4556 | No | Active | 1 A | 25 ns | 3 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | Microchip | |||||||||
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1N5802US
Microchip Technology Inc
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$9.6978 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 50 V | 1 | HIGH RELIABILITY | 1 | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | Microchip | |||||||||||||
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JANTX1N5802
Microchip Technology Inc
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$9.6978 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||||
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JAN1N5802US
Microchip Technology Inc
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$10.8246 | No | Active | 2.5 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | ULTRA FAST RECOVERY POWER | 35 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | Microchip | ||||||||||||||||
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JANTX1N5802
Semtech Corporation
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$11.0058 | Transferred | 1.3 A | 875 mV | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | SUPER FAST SOFT RECOVERY | 35 A | 1 | Qualified | E-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, G111, 2 PIN | unknown | EAR99 | SEMTECH | 2 | 8541.10.00.80 | ||||||||
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1N5802
Semtech Corporation
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$11.0098 | Transferred | 1.3 A | 875 mV | 25 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | SUPER FAST SOFT RECOVERY | 35 A | 1 | Not Qualified | E-LALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | HERMETIC SEALED, G111, 2 PIN | unknown | EAR99 | SEMTECH | 2 | 8541.10.00.80 | |||||||||
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JANTXV1N5802
Microchip Technology Inc
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$11.2691 | No | Active | 1 A | 25 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant |