Parametric results for: 1n4150-1 under Rectifier Diodes

All Filters Additional Feature Application Case Connection Configuration Diode Element Material Diode Type Forward Voltage-Max (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount

METALLURGICALLY BONDED 9

59 hits Apply

GENERAL PURPOSE 49

59 hits Apply

ISOLATED 57

59 hits Apply

Configuration (1)

SINGLE 58

59 hits Apply

Diode Element Material (1)

SILICON 58

59 hits Apply

Diode Type (1)

RECTIFIER DIODE 58

59 hits Apply

Forward Voltage-Max (VF) (1)

1 V 15

59 hits Apply

DO-35 40

59 hits Apply

O-LALF-W2 40 O-XALF-W2 17

59 hits Apply

e0 34

59 hits Apply

Manufacturer (14)

Bkc Semiconductors Inc 7 Cobham Advanced Electronic Solutions 1 Cobham PLC 4 Cobham Semiconductor Solutions 4 Compensated Devices Inc 4 Defense Logistics Agency 4 MACOM 4 Microchip Technology Inc 5 Microsemi Corporation 11 National Semiconductor Corporation 3 New Jersey Semiconductor Products Inc 1 NXP Semiconductors 3 Unitrode Corporation 4 VPT Components 4

59 hits Apply

Number of Elements (1)

1 58

59 hits Apply

Output Current-Max (3)

200 mA 37 300 mA 20 400 mA 1

Min (A) - Max (A)

59 hits Apply

Power Dissipation-Max (1)

500 mW 29

59 hits Apply

Rep Pk Reverse Voltage-Max (2)

50 V 9 75 V 26

Min (V) - Max (V)

59 hits Apply

Reverse Current-Max (1)

100 nA 15

59 hits Apply

Reverse Recovery Time-Max (2)

4 ns 47 6 ns 11

Min (µs) - Max (µs)

59 hits Apply

Surface Mount (1)

NO 57

59 hits Apply