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Parametric » Diodes » Rectifier Diodes

Parametric results for: 1n5809us.tr under Rectifier Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		1N5809US/TR Microchip Technology Inc
		JANTXV1N5809US/TR Microchip Technology Inc
		1N5809US-TR Microsemi Corporation

				Most Relevant									Technical				Compliance				Operating Conditions				Physical								Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Output Current-Max	Reverse Recovery Time-Max	Power Dissipation-Max	Diode Element Material	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Additional Feature	Application	Non-rep Pk Forward Current-Max	Number of Phases	Qualification Status	JESD-30 Code	JESD-609 Code	Reference Standard	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Pin Count

No

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Not Qualified

O-LELF-R2

e0

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS, E, 2 PIN

compliant

EAR99

8541.10.00.80

Active

3 A

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Qualified

O-LELF-R2

e0

MIL-19500

175 °C

-65 °C

NOT SPECIFIED

NOT SPECIFIED

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

Check for Price

No

No

Transferred

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Not Qualified

O-LELF-R2

e0

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROSEMI CORP

O-LELF-R2

compliant

EAR99

8541.10.00.80

2

Compare

Microchip Technology Inc

No

Active

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Not Qualified

O-LELF-R2

e0

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

HERMETIC SEALED, GLASS, E, 2 PIN

compliant

EAR99

8541.10.00.80

JANTXV1N5809US/TR

Microchip Technology Inc

Active

3 A

30 ns

5 W

SILICON

RECTIFIER DIODE

SINGLE

YES

100 V

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Qualified

O-LELF-R2

e0

MIL-19500

175 °C

-65 °C

NOT SPECIFIED

NOT SPECIFIED

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROCHIP TECHNOLOGY INC

unknown

EAR99

8541.10.00.80

Microsemi Corporation

Check for Price

No

No

Transferred

3 A

30 ns

SILICON

RECTIFIER DIODE

SINGLE

YES

1

HIGH RELIABILITY, METALLURGICALLY BONDED

ULTRA FAST RECOVERY

125 A

1

Not Qualified

O-LELF-R2

e0

ISOLATED

2

GLASS

ROUND

LONG FORM

TIN LEAD

WRAP AROUND

END

MICROSEMI CORP

O-LELF-R2

compliant

EAR99

8541.10.00.80

2