Parametric results for: 2N5102 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

EMITTER 1

4 hits Apply

Collector Current-Max (IC) (2)

400 mA 1 3.3 A 3

Min (A) - Max (A)

4 hits Apply

85 pF 1

4 hits Apply

Collector-Emitter Voltage-Max (1)

20 V 1

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 3

4 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

4 hits Apply

O-XUPM-W3 1

4 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 Semitronics Corp 1 Texas Instruments 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

175.0 °C 3

4 hits Apply

UNSPECIFIED 1

4 hits Apply

ROUND 1

4 hits Apply

POST/STUD MOUNT 1

4 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

70 W 3

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply

Transition Frequency-Nom (fT) (1)

150 MHz 3

4 hits Apply