Parametric results for: 2SC5198-O(S1,E under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 1

2 hits Apply

Collector Current-Max (IC) (1)

10 A 1

2 hits Apply

170 pF 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

140 V 1

2 hits Apply

Configuration (1)

SINGLE 1

2 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 1

2 hits Apply

R-XSFM-T3 1

2 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

150.0 °C 1

2 hits Apply

UNSPECIFIED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 2

2 hits Apply

Polarity/Channel Type (1)

NPN 1

2 hits Apply

100 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply

Transition Frequency-Nom (fT) (1)

30 MHz 1

2 hits Apply