Parametric results for: 2n6668) under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LEADFORM OPTIONS ARE AVAILABLE 3

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COLLECTOR 81 ISOLATED 2

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Collector Current-Max (IC) (1)

10 A 98

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200 pF 4

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Collector-Emitter Voltage-Max (1)

80 V 86

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Configuration (3)

DARLINGTON 47 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 48 SINGLE 1

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DC Current Gain-Min (hFE) (2)

100.0 49 1000.0 49

Min - Max

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TO-220 2 TO-220AB 70

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R-PSFM-T2 2 R-PSFM-T3 84

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e0 24 e3 2

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Manufacturer (20)

Advanced Semiconductor Inc 1 Boca Semiconductor Inc 1 Central Semiconductor Corp 4 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 15 Intersil Corporation 15 Iskra Semic Capacitors Industry 1 Microsemi Corporation 2 Mospec Semiconductor Corp 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 1 NTE Electronics Inc 1 onsemi 16 STMicroelectronics 1 SY Sinyork Co Ltd 1 Texas Instruments 1 Thomson Consumer Electronics 1

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Number of Elements (1)

1 84

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Number of Terminals (2)

2 2 3 84

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150.0 °C 60

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-65.0 °C 2

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PLASTIC/EPOXY 86

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RECTANGULAR 86

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FLANGE MOUNT 86

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Active 4 Contact Manufacturer 2 Obsolete 90 Transferred 3

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No 2 Yes 1

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235 1 260 1 NOT SPECIFIED 4

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Polarity/Channel Type (1)

PNP 98

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2 W 1 65 W 63

Min (W) - Max (W)

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2 W 2 26 W 16 65 W 4

Min (W) - Max (W)

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Surface Mount (1)

NO 98

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Transition Frequency-Nom (fT) (1)

20 MHz 51

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