Parametric results for: 2sk135 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4 ISOLATED 1

11 hits Apply

Configuration (2)

SINGLE 9 SINGLE WITH BUILT-IN DIODE 2

11 hits Apply

DS Breakdown Voltage-Min (4)

200 V 1 500 V 2 900 V 4 1 kV 2

Min (V) - Max (V)

11 hits Apply

Drain Current-Max (ID) (5)

3 A 1 5 A 5 7 A 2 9 A 2 15 A 1

Min (A) - Max (A)

11 hits Apply

Drain-source On Resistance-Max (7)

180 mΩ 1 850 mΩ 1 1.4 Ω 1 1.5 Ω 1 2.8 Ω 1 3.8 Ω 2 4.3 Ω 1

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-220AB 1

11 hits Apply

R-PSFM-T3 8

11 hits Apply

e0 4

11 hits Apply

Manufacturer (3)

Hitachi Ltd 1 New Jersey Semiconductor Products Inc 1 Toshiba America Electronic Components 9

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 8

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 3

11 hits Apply

PLASTIC/EPOXY 8

11 hits Apply

RECTANGULAR 8

11 hits Apply

FLANGE MOUNT 8

11 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 9

11 hits Apply

No 1

11 hits Apply

NOT SPECIFIED 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

40 W 2 45 W 2 125 W 1 150 W 1

Min (W) - Max (W)

11 hits Apply

100 W 1 125 W 2

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

NO 10

11 hits Apply