Register or Sign In
Parametric » Memory » SRAMs

Parametric results for: 5962-8685920YA under SRAMs

Filter Your Search

1 - 6 of 6 results

|
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
6 hits
Manufacturer Part Number: 59628685920ya
Select parts from the table below to compare.
 Compare
Compare
5962-8685920YA
 Micron Technology Inc 		Check for Price Obsolete 65.536 kbit 4 16KX4 5 V 55 ns STANDARD SRAM 1 16000 16.384 k ASYNCHRONOUS PARALLEL CMOS MILITARY R-GDIP-T22 Not Qualified e0 125 °C -55 °C MIL-STD-883 22 CERAMIC, GLASS-SEALED RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE DUAL MICRON TECHNOLOGY INC , unknown 3A001.A.2.C 8542.32.00.41
5962-8685920YA
 Matra MHS 		Check for Price Obsolete 65.536 kbit 4 16KX4 5 V 55 ns STANDARD SRAM 1 16000 16.384 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS MILITARY R-GDIP-T22 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B 22 CERAMIC, GLASS-SEALED RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE DUAL MATRA MHS , unknown 3A001.A.2.C 8542.32.00.41
5962-8685920YA
 Temic Semiconductors 		Check for Price Obsolete 65.536 kbit 4 16KX4 5 V 55 ns STANDARD SRAM 1 1 16000 16.384 k ASYNCHRONOUS 3-STATE NO PARALLEL CMOS MILITARY R-GDIP-T22 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B 22 CERAMIC, GLASS-SEALED RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE DUAL TEMIC SEMICONDUCTORS unknown
5962-8685920YA
 Matra Design Semiconductor 		Check for Price No Obsolete 65.536 kbit 4 16KX4 5 V 55 ns STANDARD SRAM COMMON 16000 16.384 k ASYNCHRONOUS 3-STATE PARALLEL 25 mA 4.5 V 90 µA CMOS MILITARY R-XDIP-T22 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 22 CERAMIC DIP DIP22,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) - hot dipped THROUGH-HOLE 2.54 mm DUAL MATRA DESIGN SEMICONDUCTOR unknown 3A001.A.2.C 8542.32.00.41
5962-8685920YA
 Pyramid Semiconductor Corporation 		Check for Price Active 65.536 kbit 4 16KX4 5 V 55 ns STANDARD SRAM COMMON 1 16000 16.384 k ASYNCHRONOUS 3-STATE PARALLEL 25 mA 4.5 V 90 µA CMOS MILITARY R-GDIP-T22 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 22 CERAMIC, GLASS-SEALED DIP DIP22,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL PYRAMID SEMICONDUCTOR CORP DIP, DIP22,.3 compliant 3A001.A.2.C 8542.32.00.41
5962-8685920YA
 Integrated Device Technology Inc 		Check for Price No No Obsolete 65.536 kbit 4 16KX4 5 V 55 ns OTHER SRAM COMMON 1 1 16000 16.384 k ASYNCHRONOUS 3-STATE NO PARALLEL 25 mA 4.5 V 90 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T22 Not Qualified e0 1 125 °C -55 °C 260 MIL-STD-883 22 CERAMIC, METAL-SEALED COFIRED DIP DIP22,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 27.555 mm 7.62 mm INTEGRATED DEVICE TECHNOLOGY INC DIP, DIP22,.3 not_compliant 3A001.A.2.C 8542.32.00.41 CDIP 22 CD22