Parametric results for: 6N883B-300 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 18 AVALANCHE RATED, HIGH VOLTAGE 11 MEGAFET 2 ULTRA LOW RESISTANCE 3

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10.1 mJ 1 20.3 mJ 2 85.0 mJ 3 95.0 mJ 4 100.0 mJ 5 230.0 mJ 15 339.0 mJ 2 364.0 mJ 1 457.0 mJ 2 480.0 mJ 4 486.0 mJ 2 507.0 mJ 1 680.0 mJ 31 1000.0 mJ 6 1280.0 mJ 3 1500.0 mJ 1 2500.0 mJ 5

Min (mJ) - Max (mJ)

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DRAIN 36 ISOLATED 28

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Configuration (4)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 13 Single 4 SINGLE WITH BUILT-IN DIODE 98

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DS Breakdown Voltage-Min (4)

60 V 1 100 V 2 800 V 102 850 V 9

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (2)

6 A 3 16 A 1

Min (A) - Max (A)

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Drain Current-Max (ID) (18)

2 A 1 2.3 A 1 3.3 A 3 3.5 A 2 4.4 A 2 4.5 A 7 5 A 2 5.4 A 4 5.5 A 9 5.8 A 9 6 A 52 6.3 A 3 6.5 A 1 9 A 1 16 A 9 65 A 1 66 A 4 85 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (20)

1.6 mΩ 1 8.5 mΩ 1 65 mΩ 5 142 mΩ 1 230 mΩ 1 500 mΩ 3 600 mΩ 6 650 mΩ 1 900 mΩ 20 940 mΩ 4 950 mΩ 2 1.4 Ω 7 1.6 Ω 3 1.8 Ω 8 1.9 Ω 1 1.95 Ω 17 2 Ω 15 2.5 Ω 8 2.7 Ω 3 3 Ω 4

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 117

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2 pF 3 3 pF 2 4 pF 2 5 pF 4 16 pF 1 18 pF 1 130 pF 2 142 pF 5 200 pF 4

Min (pF) - Max (pF)

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TO-204AA 8 TO-218AC 2 TO-220AB 35 TO-247AD 7 TO-251 2 TO-252 3 TO-252AA 5 TO-262AA 3 TO-263AB 7 TO-264AA 5 TO-268AA 2

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O-MBFM-P2 8 R-PDSO-F6 1 R-PDSO-G8 1 R-PSFM-T3 61 R-PSIP-T3 11 R-PSSO-G2 20 R-PUFM-X4 1 R-XSFM-T3 1 R-XUUC-N5 5 X-XUUC-N 1

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e0 17 e1 2 e3 34

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Manufacturer (25)

Advanced Power Electronics Corp 2 Diodes Incorporated 1 Fairchild Semiconductor Corporation 18 Freescale Semiconductor 4 Fuji Electric Co Ltd 1 Galaxy Microelectronics 1 Galaxy Semi-Conductor Co Ltd 1 Infineon Technologies AG 15 IXYS Corporation 16 Littelfuse Inc 8 MERITEK Electronics Corporation 2 Micro Commercial Components 3 Motorola Mobility LLC 4 Motorola Semiconductor Products 4 onsemi 7 Rectron Semiconductor 5 Rochester Electronics LLC 4 Samsung Semiconductor 5 Semiconductor Technology Inc 2 Silicon Transistor Corporation 1 STMicroelectronics 9 Suzhou Good-Ark Electronics Co Ltd 3 Toshiba America Electronic Components 5 Unisonic Technologies Co Ltd 34 Vishay Intertechnologies 10

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1 12 NOT APPLICABLE 3

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Number of Elements (2)

1 112 2 2

Min - Max

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Number of Terminals (6)

2 28 3 73 4 1 5 5 6 1 8 1

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ENHANCEMENT MODE 113

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150.0 °C 88 175.0 °C 1

Min (°C) - Max (°C)

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-55.0 °C 21 -50.0 °C 1

Min (°C) - Max (°C)

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METAL 8 PLASTIC/EPOXY 95 UNSPECIFIED 7

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RECTANGULAR 101 ROUND 8 UNSPECIFIED 1

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FLANGE MOUNT 71 IN-LINE 11 SMALL OUTLINE 22 UNCASED CHIP 6

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Active 89 Contact Manufacturer 4 End Of Life 4 Not Recommended 9 Obsolete 39 Transferred 20

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No 3 Yes 33

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235 1 245 3 260 12 NOT APPLICABLE 3 NOT SPECIFIED 43

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Polarity/Channel Type (2)

N-CHANNEL 117 N-CHANNEL AND P-CHANNEL 1

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83 W 2 150 W 7 180 W 6 300 W 2

Min (W) - Max (W)

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1.4 W 1 2.4 W 1 25 W 2 30 W 1 31 W 1 32.4 W 1 39 W 1 50 W 2 51 W 7 62.5 W 1 78 W 3 83 W 6 90 W 3 98 W 4 113 W 1 150 W 13 158 W 8 160 W 2 170 W 1 185 W 2 200 W 1 300 W 4 830 W 1 1.25 kW 4

Min (W) - Max (W)

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Surface Mount (2)

NO 90 YES 28

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