Parametric results for: AFT20P140-4WNR3 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type

SOURCE 1

2 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS 1 SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

S BAND 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 NXP Semiconductors 1

2 hits Apply

3 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

125.0 °C 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply