Findchips: Parametric Search Results for AM29F040B-150PE


Select Parts		Part Number

		AM29F040B-150PEB AMD
		AM29F040B-150PE AMD
		AM29F040B-150PE Spansion
		AM29F040B-150PEB Spansion

			Most Relevant						Technical																						Compliance			Operating Conditions				Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Additional Feature	Command User Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Transferred

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS

YES

100000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

20 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

ADVANCED MICRO DEVICES INC

DIP

DIP, DIP32,.6

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

Transferred

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION

YES

1000000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

20 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

ADVANCED MICRO DEVICES INC

DIP

DIP, DIP32,.6

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

Obsolete

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

YES

1000000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

260

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

SPANSION INC

DIP

PLASTIC, MO-015AP, DIP-32

not_compliant

3A001.A.2.C

8542.32.00.51

Check for Price

Obsolete

4.1943 Mbit

512KX8

5 V

150 ns

FLASH

1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

SPANSION INC

DIP

DIP,

compliant

3A001.A.2.C

8542.32.00.51

Compare

AM29F040B-150PEB

AMD

Check for Price

Transferred

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS

YES

100000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

20 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

ADVANCED MICRO DEVICES INC

DIP

DIP, DIP32,.6

unknown

3A001.A.2.C

8542.32.00.51

AM29F040B-150PE

AMD

Check for Price

Transferred

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION

YES

1000000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

3-STATE

PARALLEL

5 V

20 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

ADVANCED MICRO DEVICES INC

DIP

DIP, DIP32,.6

unknown

3A001.A.2.C

8542.32.00.51

AM29F040B-150PE

Spansion

Check for Price

Obsolete

4.1943 Mbit

64K

512KX8

5 V

150 ns

FLASH

YES

1000000 Write/Erase Cycles

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5 µA

40 µA

5.5 V

4.5 V

CMOS

MILITARY

YES

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

260

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

SPANSION INC

DIP

PLASTIC, MO-015AP, DIP-32

not_compliant

3A001.A.2.C

8542.32.00.51

AM29F040B-150PEB

Spansion

Check for Price

Obsolete

4.1943 Mbit

512KX8

5 V

150 ns

FLASH

1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS

512000

524.288 k

ASYNCHRONOUS

PARALLEL

5 V

5.5 V

4.5 V

CMOS

MILITARY

NOR TYPE

R-PDIP-T32

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.715 mm

42.037 mm

15.24 mm

SPANSION INC

DIP

DIP,

compliant

3A001.A.2.C

8542.32.00.51

Parametric results for: AM29F040B-150PE under Flash Memories