Parametric results for: APTM20DHM08G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

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3000.0 mJ 1

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ISOLATED 1

1 hit Apply

Configuration (1)

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

200 V 1

1 hit Apply

Drain Current-Max (ID) (1)

208 A 1

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Drain-source On Resistance-Max (1)

10 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-XUFM-X8 1

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e1 1

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Manufacturer (1)

Microsemi Corporation 1

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1 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Yes 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

NO 1

1 hit Apply