Parametric results for: BFG67 under RF Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 14 LOW NOISE, HIGH RELIABILITY 7 TUNER 8

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COLLECTOR 24

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Collector Current-Max (IC) (1)

50 mA 51

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Collector-Emitter Voltage-Max (1)

10 V 36

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Configuration (1)

SINGLE 51

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DC Current Gain-Min (hFE) (2)

60.0 32 65.0 1

Min - Max

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Highest Frequency Band (3)

C BAND 6 L BAND 27 ULTRA HIGH FREQUENCY BAND 3

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R-PDSO-G4 36

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e0 10 e3 19

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Manufacturer (5)

North American Philips Discrete Products Div 4 NXP Semiconductors 34 Philips Semiconductors 9 Telefunken Microelectronics Gmbh 1 YAGEO Corporation 3

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1 7 NOT APPLICABLE 3

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Number of Elements (1)

1 51

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Number of Terminals (1)

4 36

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150.0 °C 4 175.0 °C 24

Min (°C) - Max (°C)

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PLASTIC/EPOXY 36

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RECTANGULAR 36

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SMALL OUTLINE 36

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Active 3 Obsolete 34 Transferred 14

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Yes 12

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260 10

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Polarity/Channel Type (1)

NPN 51

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300 mW 11

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200 mW 1 300 mW 21 500 mW 3

Min (W) - Max (W)

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Power Gain-Min (Gp) (2)

10.9 dB 6 11.0 dB 6

Min (dB) - Max (dB)

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Surface Mount (1)

YES 51

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Transition Frequency-Nom (fT) (2)

7.5 GHz 21 8 GHz 19

Min (MHz) - Max (MHz)

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