Parametric results for: BLV45/12 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

ISOLATED 1

1 hit Apply

Collector Current-Max (IC) (1)

9 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

16.5 V 1

1 hit Apply

Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

15.0 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

O-CXFM-F6 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

6 1

1 hit Apply

200.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

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ROUND 1

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FLANGE MOUNT 1

1 hit Apply

Obsolete 1

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Polarity/Channel Type (1)

NPN 1

1 hit Apply

Power Gain-Min (Gp) (1)

6.5 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply