Parametric results for: BS616LV8010EIG70 under SRAMs

All Filters Access Time-Max Alternate Memory Width I/O Type JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

70 ns 1

1 hit Apply

8 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDSO-G44 1

1 hit Apply

18.41 mm 1

1 hit Apply

Manufacturer (1)

Brilliance Semiconductor Inc 1

1 hit Apply

Memory Density (1)

8.3886 Mbit 1

1 hit Apply

STANDARD SRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

44 1

1 hit Apply

524.288 k 1

1 hit Apply

512000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

512KX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

TSOP44,.46,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

1 hit Apply