Parametric results for: BSP298 E6327 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

3 hits Apply

130.0 mJ 2

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

400 V 3

3 hits Apply

Drain Current-Max (ID) (1)

500 mA 3

3 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G4 3

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 Siemens 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

255 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

1.8 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply