Parametric results for: BSS138-G under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

50 V 4

6 hits Apply

Drain Current-Max (ID) (1)

220 mA 4

6 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

6 pF 2

6 hits Apply

TO-236 1

6 hits Apply

R-PDSO-G3 4

6 hits Apply

e3 1

6 hits Apply

Manufacturer (4)

Comchip Technology Corporation Ltd 1 Galaxy Microelectronics 1 onsemi 1 Unisonic Technologies Co Ltd 3

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 2

6 hits Apply

-55.0 °C 1

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Active 5 Obsolete 1

6 hits Apply

Yes 1

6 hits Apply

260 1 NOT SPECIFIED 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

350 mW 1

6 hits Apply

350 mW 1 360 mW 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 4

6 hits Apply