Parametric results for: BUK474-200A-B under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

50.0 mJ 3

4 hits Apply

ISOLATED 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

4 hits Apply

Drain Current-Max (ID) (1)

5.3 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

80 pF 1

4 hits Apply

TO-220AB 3

4 hits Apply

R-PSFM-T3 3

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

NXP Semiconductors 3 Philips Semiconductors 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

25 W 1

4 hits Apply

25 W 2

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply