Parametric results for: BUK9E4R9-60E,127 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

2 hits Apply

273.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

2 hits Apply

Drain Current-Max (ID) (1)

100 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

4.9 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

TO-262AA 1

2 hits Apply

R-PSIP-T3 1

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Nexperia 1 NXP Semiconductors 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

175.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

IN-LINE 1

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

234 W 1

2 hits Apply

Surface Mount (1)

NO 1

2 hits Apply