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CAT28LV256GI-25TE7
Catalyst Semiconductor
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Check for Price | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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CAT28LV256GI-25TE13
Catalyst Semiconductor
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Check for Price | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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CAT28LV256GI-25T
onsemi
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Check for Price | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 150 µA | 15 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-N32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 32 | PLASTIC/EPOXY | QCCN | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN | NO LEAD | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 | onsemi | ||||
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CAT28LV256GI-25TE13
onsemi
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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CAT28LV256GI-25T
Catalyst Semiconductor
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Check for Price | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 150 µA | 15 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||
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CAT28LV256GI-25TE7
onsemi
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 250 ns | EEPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | ON SEMICONDUCTOR | QFJ | QCCJ, | 32 | compliant | EAR99 | 8542.32.00.51 |