Parametric results for: FLL810IQ-3C under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 2

4 hits Apply

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

15 V 4

4 hits Apply

Drain Current-Max (ID) (1)

15 A 4

4 hits Apply

JUNCTION 4

4 hits Apply

Highest Frequency Band (1)

L BAND 4

4 hits Apply

R-CDFM-F4 4

4 hits Apply

Manufacturer (4)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1 SUMITOMO ELECTRIC Device Innovations Inc 1 SUMITOMO ELECTRIC Industries Ltd 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Yes 2

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

136 W 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply