Parametric results for: FQB27N25 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

6 hits Apply

600.0 mJ 3 972.0 mJ 3

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

250 V 6

6 hits Apply

Drain Current-Max (ID) (1)

25.5 A 6

6 hits Apply

Drain-source On Resistance-Max (2)

110 mΩ 3 131 mΩ 3

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-263AB 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 1 e3 2

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 2 Rochester Electronics LLC 1

6 hits Apply

1 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 1 Obsolete 4 Transferred 1

6 hits Apply

No 1 Yes 2

6 hits Apply

245 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

180 W 1 417 W 3

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply