Parametric results for: HUF75321P3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

6 hits Apply

Drain Current-Max (ID) (2)

31 A 1 35 A 5

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

32 mΩ 1 34 mΩ 5

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-220AB 6

6 hits Apply

R-PSFM-T3 6

6 hits Apply

e0 2 e3 4

6 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 1 Intersil Corporation 1 onsemi 1 Rochester Electronics LLC 1

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 6

6 hits Apply

Active 2 Obsolete 2 Transferred 2

6 hits Apply

Yes 4

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

70 W 2 93 W 3

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply