Parametric results for: HUF75617D3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 11

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

100 V 11

11 hits Apply

Drain Current-Max (ID) (1)

16 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

90 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-251AA 3 TO-252AA 8

11 hits Apply

R-PSIP-T3 3 R-PSSO-G2 8

11 hits Apply

e0 2 e3 7

11 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 5 Intersil Corporation 3 Rochester Electronics LLC 3

11 hits Apply

1 3 NOT APPLICABLE 1 NOT SPECIFIED 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (2)

2 8 3 3

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

175.0 °C 7

11 hits Apply

-55.0 °C 1

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

IN-LINE 3 SMALL OUTLINE 8

11 hits Apply

Active 3 Obsolete 5 Transferred 3

11 hits Apply

Yes 3

11 hits Apply

260 1 NOT APPLICABLE 1 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

64 W 7

11 hits Apply

Surface Mount (2)

NO 3 YES 8

11 hits Apply