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IDT71256L150TDB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.1475 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, CERDIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||
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IDT71256L150L32B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 125 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||
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IDT71256L150L28B8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N28 | Not Qualified | e0 | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | QCCN, | 28 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||
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IDT71256L150EB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 125 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDFP-F28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DFP | FL28,.5 | RECTANGULAR | FLATPACK | YES | Tin/Lead (Sn/Pb) | FLAT | 1.27 mm | DUAL | 2.921 mm | 18.288 mm | 12.446 mm | INTEGRATED DEVICE TECHNOLOGY INC | DFP | CERPACK-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||
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IDT71256L150LB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||
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IDT71256L150L32B8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | QCCN, | 32 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||
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IDT71256L150DB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 125 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 37.211 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.600 INCH, CERDIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||
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IDT71256L150L32BG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e3 | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 32 | compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||
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IDT71256L150TCB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 125 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP28,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 35.56 mm | 7.62 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | ||
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IDT71256L150L28B
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 150 ns | STANDARD SRAM | COMMON | 1 | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 200 µA | 2 V | 125 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC28,.35X.55 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | NO LEAD | 1.27 mm | QUAD | 3.048 mm | 13.97 mm | 8.89 mm | INTEGRATED DEVICE TECHNOLOGY INC | QLCC | LCC-28 | 28 | not_compliant | 3A001.A.2.C | 8542.32.00.41 |