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IPB033N10N5LFATMA1
Infineon Technologies AG
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$3.1817 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 23 A | 3.3 mΩ | 273 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 480 A | SILICON | TO-263AB | R-PSSO-G2 | e3 | 1 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-263, D2PAK-3/2 | not_compliant | EAR99 | Infineon |