Parametric results for: IPP65R110CFDAAKSA1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

HIGH RELIABILITY 1

1 hit Apply

845.0 mJ 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

650 V 1

1 hit Apply

Drain Current-Max (ID) (1)

31.2 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

110 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-220AB 1

1 hit Apply

R-PSFM-T3 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

No 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply