Parametric results for: IRF3205 under Power Field-Effect Transistors
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IRF3205PBF
International Rectifier
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$0.4250 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 264 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | |||||||||||
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IRF3205ZPBF
International Rectifier
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$0.4850 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 440 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | |||||||||||
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IRF3205STRLPBF
International Rectifier
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$0.5960 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 264 mJ | 211 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | 115 ns | 115 ns | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK-3/2 | 3 | not_compliant | EAR99 | |||||
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IRF3205PBF
Infineon Technologies AG
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$0.7513 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 264 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | |||||||||||
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AUIRF3205ZSTRL
International Rectifier
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$0.8390 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 6.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 440 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK | ROHS COMPLIANT, PLASTIC, D2PAK-3 | 3 | compliant | EAR99 | ||||||||||
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IRF3205ZPBF
Infineon Technologies AG
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$0.8853 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 440 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||
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IRF3205STRLPBF
Infineon Technologies AG
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$0.8933 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 264 mJ | 211 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | 115 ns | 115 ns | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | D2PAK-3/2 | not_compliant | EAR99 | Infineon | ||||||
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IRF3205LPBF
Infineon Technologies AG
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$0.9107 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 264 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | IN-LINE, R-PSIP-T3 | not_compliant | EAR99 | Infineon | ||||||||||
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IRF3205STRRPBF
Infineon Technologies AG
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$0.9539 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 75 A | 8 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 264 mJ | 211 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 390 A | SWITCHING | SILICON | 115 ns | 115 ns | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | D2PAK-3/2 | not_compliant | EAR99 | Infineon | 1995-11-01 | |||||
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IRF3205ZLPBF
Infineon Technologies AG
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$1.0034 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 440 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon |