Parametric results for: IRF520NL under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY 2

3 hits Apply

91.0 mJ 2

3 hits Apply

DRAIN 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

3 hits Apply

Drain Current-Max (ID) (1)

9.7 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

TO-262AA 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

e0 1 e3 1

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 International Rectifier 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

48 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply