Parametric results for: IRFCG50 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

1 kV 1

1 hit Apply

Drain-source On Resistance-Max (1)

2 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-XUUC-N2 1

1 hit Apply

Manufacturer (1)

International Rectifier 1

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Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

UNCASED CHIP 1

1 hit Apply

Transferred 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply