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1 - 10 of 17 results
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IRHM7360UPBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 250 mΩ | RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 88 A | SWITCHING | SILICON | 215 ns | 92 ns | TO-254AA | S-MSFM-P3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | METAL | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-MSFM-P3 | compliant | EAR99 | 8541.29.00.95 | |||||
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IRHM7360SE
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | AVALANCHE RATED; RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 88 A | SWITCHING | SILICON | TO-254AA | S-MSFM-P3 | e0 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | METAL | SQUARE | FLANGE MOUNT | Tin/Lead (Sn/Pb) | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, S-MSFM-P3 | not_compliant | EAR99 | |||||||
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IRHM7360SESCS
International Rectifier
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | TO-254AA | S-XSFM-P3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-XSFM-P3 | compliant | EAR99 | |||||||||||
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IRHM7360SEU
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY, RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | S-MSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | METAL | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-MSFM-P3 | compliant | EAR99 | ||||||||||
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IRHM7360SEU
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY, RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | S-MSFM-P3 | e0 | Not Qualified | ISOLATED | METAL | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | |||||||||||||
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IRHM7360SEPBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | AVALANCHE RATED; RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | TO-254AA | S-MSFM-P3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | METAL | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, S-MSFM-P3 | compliant | EAR99 | |||||||||||
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IRHM7360SESCSPBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | TO-254AA | S-XSFM-P3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | UNSPECIFIED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-XSFM-P3 | compliant | EAR99 | |||||||||
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IRHM7360SEDPBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY, RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | S-MSFM-P3 | Not Qualified | 150 °C | 260 | 40 | ISOLATED | METAL | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-MSFM-P3 | compliant | EAR99 | ||||||||||
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IRHM7360SED
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY, RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | S-MSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | METAL | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | FLANGE MOUNT, S-MSFM-P3 | compliant | EAR99 | ||||||||||
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IRHM7360SED
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 22 A | 210 mΩ | HIGH RELIABILITY, RADIATION HARDENED | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | S-MSFM-P3 | e0 | Not Qualified | ISOLATED | METAL | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 |