Parametric results for: J40-2* under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (3)

2X1 HORIZONTAL 1 2X1 VERTICAL 1 SINGLE WITH BUILT-IN DIODE 1

6 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

6 hits Apply

Drain Current-Max (ID) (1)

2 A 1

6 hits Apply

Drain-source On Resistance-Max (1)

117 mΩ 1

6 hits Apply

JUNCTION 2 METAL-OXIDE SEMICONDUCTOR 1

6 hits Apply

R-PDSO-F6 1

6 hits Apply

Manufacturer (4)

Dae Ryung Electronic Co Ltd 2 National Semiconductor Corporation 1 Texas Instruments 1 Toshiba America Electronic Components 2

6 hits Apply

Number of Elements (1)

1 1

6 hits Apply

Number of Terminals (1)

6 1

6 hits Apply

ENHANCEMENT MODE 1

6 hits Apply

125.0 °C 2

6 hits Apply

PLASTIC/EPOXY 1

6 hits Apply

RECTANGULAR 1

6 hits Apply

SMALL OUTLINE 1

6 hits Apply

Active 2 Obsolete 4

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 2 P-CHANNEL 1

6 hits Apply

350 mW 2

6 hits Apply

Surface Mount (2)

NO 2 YES 1

6 hits Apply