Parametric results for: JANTX1N5312UR-1 under Current Regulator Diodes
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JANTX1N5312UR-1
MACOM
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$27.6881 | Yes | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-XELF-R2 | DO-213AB | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.70 | |||||||||||||||
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JANTX1N5312UR-1
Microchip Technology Inc
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$36.7283 | No | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS, LL41, MELF-2 | |||||||||||
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JANTX1N5312UR-1
Microsemi Corporation
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Check for Price | No | No | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | EAR99 | 8541.10.00.70 | HERMETIC SEALED, GLASS, LL41, MELF-2 | DO-213AB | 2 | Microsemi Corporation | ||||||
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JANTX1N5312UR-1
Compensated Devices Inc
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Check for Price | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 17 kΩ | Not Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | COMPENSATED DEVICES INC | unknown | HERMETIC SEALED PACKAGE-2 | ||||||||||||||
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JANTX1N5312UR-1
Cobham PLC
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Check for Price | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | e0 | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | COBHAM PLC | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||
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JANTX1N5312UR-1
Defense Logistics Agency
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Check for Price | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | Qualified | O-XELF-R2 | MIL-19500/463G | DO-213AB | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WRAP AROUND | END | DEFENSE LOGISTICS AGENCY | unknown | HERMETIC SEALED PACKAGE-2 | ||||||||||||||||||
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JANTX1N5312UR-1
Cobham Semiconductor Solutions
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Check for Price | Transferred | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Not Qualified | O-XELF-R2 | e0 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | AEROFLEX/METELICS INC | unknown | EAR99 | 8541.10.00.70 | |||||||||||||
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JANTX1N5312UR-1
VPT Components
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Check for Price | Yes | Active | 2.6 V | 3.9 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | Qualified | O-LELF-R2 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.70 | MELF-2 |