Parametric results for: JANTXV 2N5667 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 19

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Collector Current-Max (IC) (3)

3 A 12 5 A 38 10 A 1

Min (A) - Max (A)

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90 pF 1 120 pF 6

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (1)

300 V 35

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Configuration (1)

SINGLE 51

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DC Current Gain-Min (hFE) (4)

5.0 11 10.0 9 25.0 30 40.0 1

Min - Max

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TO-205AD 9 TO-276AA 2 TO-39 2 TO-5 16

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O-MBCY-W3 31 O-MBFM-P2 4 R-CBCC-N3 2

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e0 26 e1 2

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Manufacturer (15)

Boca Semiconductor Inc 9 Microchip Technology Inc 2 Microsemi Corporation 5 New England Semiconductor 2 Semicoa Semiconductors 9 Semiconductor Technology Inc 1 Silicon Transistor Corporation 4 Solid Power Corp 3 Solitron Devices Inc 4 Spectrum Control 4 Square D by Schneider Electric 1 TT Electronics Power and Hybrid / Semelab Limited 3 TT Electronics Resistors 3 Unitrode Corporation 1 VPT Components 2

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Number of Elements (1)

1 51

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Number of Terminals (2)

2 4 3 33

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200.0 °C 42

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-65.0 °C 6

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CERAMIC, METAL-SEALED COFIRED 2 METAL 35

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RECTANGULAR 2 ROUND 35

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CHIP CARRIER 2 CYLINDRICAL 31 FLANGE MOUNT 4

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Active 11 Contact Manufacturer 4 Obsolete 24 Transferred 14

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No 7 Yes 1

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NOT SPECIFIED 6

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Polarity/Channel Type (1)

NPN 51

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1.2 W 6 15 W 5

Min (W) - Max (W)

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1.2 W 4 15 W 30

Min (W) - Max (W)

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Surface Mount (2)

NO 50 YES 2

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Transition Frequency-Nom (fT) (2)

20 MHz 25 60 MHz 3

Min (MHz) - Max (MHz)

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