Parametric results for: KM416C256BLJ-7 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

1 hit Apply

Access Time-Max (1)

70 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 1

1 hit Apply

COMMON 1

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R-PDSO-J40 1

1 hit Apply

e0 1

1 hit Apply

26.04 mm 1

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Manufacturer (1)

Samsung Semiconductor 1

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Memory Density (1)

4.1943 Mbit 1

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FAST PAGE DRAM 1

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Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

40 1

1 hit Apply

262.144 k 1

1 hit Apply

256000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

256KX16 1

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3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

SOJ 1

1 hit Apply

SOJ40,.44 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Refresh Cycles (1)

512 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply