Findchips: Parametric Search Results for MB84VD21182EM-70PBS


Select Parts		Part Number

		MB84VD21182EM-70PBS FUJITSU Limited
		MB84VD21182EM-70PBS-E1 Spansion
		MB84VD21182EM-70PBS FUJITSU Semiconductor Limited
		MB84VD21182EM-70PBS Cypress Semiconductor
		MB84VD21182EM-70PBS Spansion

				Most Relevant						Technical													Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Power Supplies	Access Time-Max	Memory IC Type	Additional Feature	Mixed Memory Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

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Active

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 256K X 16/512K X 8

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

15 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

FUJITSU LTD

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

Check for Price

Yes

Obsolete

16.7772 Mbit

1MX16

3 V

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 512K X 8 OR 256K X ... more

1000000

1.0486 M

ASYNCHRONOUS

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

SPANSION INC

TFBGA,

compliant

EAR99

8542.32.00.71

BGA

Check for Price

Active

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 256K X 16/512K X 8

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

15 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

FUJITSU LTD

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

BGA

Check for Price

Active

3 V

70 ns

MEMORY CIRCUIT

FLASH+SRAM

5 µA

50 µA

CMOS

INDUSTRIAL

S-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA56,8X8,32

SQUARE

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

Check for Price

Obsolete

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 512K X 8 OR 256K X ... more

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

5 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

SPANSION INC

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

BGA

Compare

MB84VD21182EM-70PBS

FUJITSU Limited

Check for Price

Active

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 256K X 16/512K X 8

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

15 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

FUJITSU LTD

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

MB84VD21182EM-70PBS-E1

Spansion

Check for Price

Yes

Obsolete

16.7772 Mbit

1MX16

3 V

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 512K X 8 OR 256K X ... more

1000000

1.0486 M

ASYNCHRONOUS

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

SPANSION INC

TFBGA,

compliant

EAR99

8542.32.00.71

BGA

MB84VD21182EM-70PBS

FUJITSU Semiconductor Limited

Check for Price

Active

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 256K X 16/512K X 8

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

15 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

FUJITSU LTD

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

BGA

MB84VD21182EM-70PBS

Cypress Semiconductor

Check for Price

Active

3 V

70 ns

MEMORY CIRCUIT

FLASH+SRAM

5 µA

50 µA

CMOS

INDUSTRIAL

S-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

FBGA

BGA56,8X8,32

SQUARE

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

MB84VD21182EM-70PBS

Spansion

Check for Price

Obsolete

16.7772 Mbit

1MX16

3 V

70 ns

MEMORY CIRCUIT

SRAM IS ORGANIZED AS 512K X 8 OR 256K X ... more

FLASH+SRAM

1000000

1.0486 M

ASYNCHRONOUS

5 µA

50 µA

3.3 V

2.7 V

CMOS

INDUSTRIAL

R-PBGA-B56

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

TFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

7.2 mm

7 mm

SPANSION INC

TFBGA, BGA56,8X8,32

compliant

EAR99

8542.32.00.71

BGA

Parametric results for: MB84VD21182EM-70PBS under Other Memory ICs