Parametric results for: MJD122T4 under Power Bipolar Transistors
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NJVMJD122T4G-VF01
onsemi
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$0.4201 | Yes | Yes | Obsolete | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ONSEMI | DPAK-3/2 | 369C | not_compliant | EAR99 | 2017-01-31 | onsemi | |||||||||||||
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MJD122T4
STMicroelectronics
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$0.4463 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 20 W | 20 W | SWITCHING | SILICON | 4 V | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | STMICROELECTRONICS | ROHS COMPLIANT, DPAK-2/3 | not_compliant | EAR99 | STMicroelectronics | TO-252 | 3 | 8541.29.00.95 | ||||||||||
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NJVMJD122T4G
onsemi
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$0.4746 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | AMPLIFIER | SILICON | R-PSSO-G2 | e3 | AEC-Q101 | 1 | 150 °C | -65 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | ONSEMI | DPAK-3/2 | 369C | not_compliant | EAR99 | onsemi | DPAK (SINGLE GAUGE) TO-252 | 3 | |||||||||||
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MJD122T4G
onsemi
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$0.4916 | Yes | Active | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | ONSEMI | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | 369C | not_compliant | EAR99 | onsemi | DPAK (SINGLE GAUGE) TO-252 | 3 | 8541.29.00.95 | |||||||||||
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MJD122T4
onsemi
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Check for Price | No | Obsolete | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 20 W | SWITCHING | SILICON | R-PSSO-G2 | e0 | Not Qualified | 1 | 150 °C | 235 | NOT SPECIFIED | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn80Pb20) | GULL WING | SINGLE | ONSEMI | PLASTIC, CASE 369C-01, DPAK-3 | 369C | not_compliant | EAR99 | onsemi | DPAK (SINGLE GAUGE) TO-252 | 3 | 8541.29.00.95 | |||||||||||
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MJD122T4
Motorola Semiconductor Products
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Check for Price | Transferred | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 200 pF | 20 W | AMPLIFIER | SILICON | 3.5 µs | 4 V | R-PDSO-G2 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | MOTOROLA INC | unknown | EAR99 | 8541.29.00.95 | |||||||||||||||||||
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MJD122T4
Motorola Mobility LLC
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Check for Price | Transferred | 100 V | 8 A | NPN | YES | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 2 | 1 | 100 | 4 MHz | 200 pF | 20 W | AMPLIFIER | SILICON | 3.5 µs | 4 V | R-PDSO-G2 | Not Qualified | 150 °C | COLLECTOR | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | MOTOROLA INC | SMALL OUTLINE, R-PDSO-G2 | unknown | EAR99 | 8541.29.00.95 |