Parametric results for: MMBF170 under Small Signal Field-Effect Transistors
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MMBF170-7-F
Diodes Incorporated
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$0.0238 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | DIODES INC | 3 | compliant | EAR99 | 8541.21.00.95 | ||||||||
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MMBF170LT1
onsemi
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$0.0506 | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e0 | Not Qualified | 1 | 150 °C | -55 °C | 235 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | ON SEMICONDUCTOR | 3 | not_compliant | EAR99 | 8541.21.00.95 | SOT-23 (TO-236) 3 LEAD | TO-236, CASE 318-08, 3 PIN | 318 | onsemi | |||||||
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MMBF170
Fairchild Semiconductor Corporation
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$0.0518 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | 3 | compliant | EAR99 | SOT-23 | TO-236AB, 3 PIN | 3LD, SOT23, JEDEC TO-236, LOW PROFILE | ||||||||
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MMBF170LT3G
onsemi
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$0.0806 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | ON SEMICONDUCTOR | 3 | compliant | EAR99 | SOT-23 (TO-236) 3 LEAD | TO-236, 3 PIN | 318 | onsemi | ||||||||
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MMBF170
onsemi
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$0.0882 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ONSEMI | compliant | EAR99 | TO-236AB, 3 PIN | 318-08 | onsemi | ||||||||||
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MMBF170LT1G
onsemi
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$0.1285 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | 3 | compliant | EAR99 | 8541.29.00.95 | SOT-23 (TO-236) 3 LEAD | TO-236, 3 PIN | 318-08 | onsemi | |||||||
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MMBF170Q-7-F
Diodes Incorporated
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$0.1310 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | HIGH RELIABILITY | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | AEC-Q101; MIL-STD-202 | 1 | 150 °C | -55 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | DIODES INC | compliant | EAR99 | ||||||||||||
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MMBF170
National Semiconductor Corporation
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e0 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | compliant | ||||||||||||||||
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MMBF170
Texas Instruments
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e0 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 | ||||||||||||||
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MMBF170D87Z
Texas Instruments
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NATIONAL SEMICONDUCTOR CORP | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 |